| PART |
Description |
Maker |
| GA20SICP12-263-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA50JT12-247-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA50JT06-CAL-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA10JT12-247 |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA20JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| SIDC24D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 10A diode in TO263 package
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
